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PD55015 - PD55015S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V * NEW RF PLASTIC PACKAGE
DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature
0
PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55015 PD55015
PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55015S XPD55015S
Value 40 20 5 73 165 -65 to 165
Unit V V A W
0C 0C
THERMAL DATA
R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3
0
C/W 1/10
PD55015 - PD55015S
ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC
Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter VDS = 28 V VDS = 0 V ID = 150 mA ID = 2.5 A ID = 2.5 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 2.5 89 60 6.5 2.0 Min. Typ. Max. 1 1 5.0 0.8 Unit A A V V mho pF pF pF
DYNAMIC
Symbol POUT GPS D LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 12.5 V VDD = 12.5 V VDD = 12.5 V IDQ = 150 mA POUT = 15 W POUT = 15 W POUT = 15 W IDQ = 150 mA IDQ = 150 mA IDQ = 150 mA 20:1 Min. 15 13.5 50 Typ. Max. Unit W dB % VSWR
f = 500 MHz VDD = 15.5 V ALL PHASE ANGLES
PIN CONNECTION
SOURCE
D
ZDL
GATE
DRAIN G Zin
Typical Input Impedance
Typical Drain Load Impedance
SC15200
SC13140
S
PD55015
Frequency MHz 480 500 520 Zin
IMPEDANCE DATA PD55015S
Zdl
Frequency MHz 480 500 520
Zin
Zdl
2.13 - j1.09 1.95 - j.31 1.83 - j.70
1.55 + j.34 1.63 - j.25 1.43 + j.30
1.43 - j1.27 1.62 - j1.05 1.57 - j.91
1.47 + j.65 1.49 + j.58 1.35 +j.36
2/10
PD55015 - PD55015S TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
1000
Drain Current vs. Gate Voltage
4 3.5
Id, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
3 2.5 2 1.5 1
VDS= 10V
100
Ciss
Coss
10
Crss
f=1MHz
1 0 5 10 15 20 25
0.5 0 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Vgs, GATE-SOURCE VOLTAGE (V)
Gate-Source Volatge vs. Case Temperature
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.04
1.02
ID = 3A ID = 2A
1
ID = 1.5A
0.98
VDS= 10V
ID = 1A ID =.25A
0.96 -25 0 25 50 75
Tc, CASE TEMPERATURE (C)
3/10
PD55015 - PD55015S TYPICAL PERFORMANCE
Output Power vs. Input Power
18 16
480M Hz 520MHz
PD55015
Power Gain vs. Output Power
18
Pout, OUTPUT POWER (W)
Gp, POWER GAIN (dB)
14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VDD=12.5V IDQ=150m A 500MHz
16
480MHz
14
500MHz
12
520MHz
10
VDD =12.5V IDQ=150mA
8 0 2 4 6 8 10 12 14 16 18
Pin, INPUT POWER (W) Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
70
480MHz
Return Loss vs. Output Power
0
60
Nd, DRAIN EFFICIENCY (%)
480MHz
Rtl, RETURN LOSS (dB)
50
-10
500MHz
40
520MHz
-20
500MHz
30 20
VDD=12.5V IDQ=150m A
520MHz
-30
VDD=12.5V IDQ=150mA
10 0 0 2 4 6 8 10 12
-40 14 16 18 0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
20
480MHz
Drain Efficiency vs. Bias Current
70
500MHz
Pout, OUTPUT POWER (W)
Nd, DRAIN EFFICIENCY (%)
18
500MHz
60
16
520MHz
480MHz
14
50
520MHz
12
40
VDD=12.5V Pin=0.8W
10
VDD =12.5V Pin=0.8W
8 0 200 400 600 800 1000
30 0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
Idq, BIAS CURRENT (mA)
4/10
PD55015 - PD55015S TYPICAL PERFORMANCE
Output Power vs. Drain Voltage
25
500MHz
Drain Efficency vs. Drain Voltage
70
500MHz
Pout, OUTPUT POWER (W)
20
480MHz
Nd, DRAIN EFFICIENCY (%)
60
520MHz 480MHz
15
520MHz
50
10
40
Idq=150mA Pin=0.8W
5
Idq=150mA Pin=0.8W
0 7 8 9 10 11 12 13 14 15 16 17
30 7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Output Power vs. Gate Bias Voltage
20
480MHz
Output Power vs. Input Power
18 16
480MHz
PD55015S
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
15
14
520MHz
12 10 8 6 4 2 0
VDD=12.5V IDQ=150mA 500MHz
520MHz
10
500MHz
5
VDD=12.5V Pin=0.8W
0 0 0.5 1 1.5 2 2.5 3 3.5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE BIAS VOLTAGE (V)
Pin, INPUT POWER (W)
Power Gain vs. Output Power
18
Drain Efficiency vs. Output Power
70
500MHz
480MHz
60
Nd, DRAIN EFFICIENCY (%)
16
500MHz
Gp, POWER GAIN (dB)
50
480MHz 520MHz
14
520MHz
40
12
30
20 10
VDD=12.5V IDQ=150 mA
10
VDD=12.5V IDQ=150mA
8 0 2 4 6 8 10 12 14 16 18
0 0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
5/10
PD55015 - PD55015S TYPICAL PERFORMANCE
Return Loss vs. Output Power
0
Output Power vs. Bias Current
20
Pout, OUTPUT POWER (W)
18
480MHz
Rtl, RETURN LOSS (dB)
-10
500MHz
16
500MHz
520MHz
480MHz
-20
14
520M Hz
12
VDD=12.5V Pin=0.5 W
-30
VDD =12.5V IDQ=150mA
520MHz
10
-40 0 2 4 6 8 10 12 14 16 18
8 0 200 400 600 800 1000
Pout, OUTPUT POWER (W)
Idq, BIAS CURRENT (mA)
Drain Efficiency vs. Bias Current
70
Output Power vs. Drain Voltage
25
480MHz
Nd, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (W)
20
500MHz
60
480MHz 500MHz
15
520MHz
50
520MHz
10
40
VDD=12.5V Pin=0.5W
5
Idq=150mA Pin=0.5W
30 0 200 400 600 800 1000
0 7 8 9 10 11 12 13 14 15 16 17
Idq, BIAS CURRENT (mA)
VDS, DRAIN-SOURCE VOLTAGE (V)
Drain Efficency vs. Drain Voltage
70
480MHz
Output Power vs. Gate Bias Voltage
20
Nd, DRAIN EFFICIENCY (%)
60
Pout, OUTPUT POWER (W)
500MHz
480MHz
15
500MHz
520MHz
50
10
520MHz
40
Idq=150m A Pin=0.5W
5
VDD=12.5V Pin=0.5W
30 7 8 9 10 11 12 13 14 15 16 17
0 0 0.5 1 1.5 2 2.5 3 3.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE BIAS VOLTAGE (V)
6/10
PD55015 - PD55015S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2 C1,C12 C2,C3,C4,C11, C12,C13 C6,C18 C9,C15 C8,C16 C7,C17 C5, C10 L1 N1,N2 FERRITE BEAD 300pF, 100 mil CHIP CAPACITOR 1 TO 20 pF TRIMMER CAPACITOR pF 100 mil CHIP CAP 10F, 50V ELECTROLYTIC CAPACITOR 0.1mF, 100 mil CHIP CAP 1,000pF 100 mil CHIP CAP 33pF, 100 mil CHIP CAP 56nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 1 k, 1W CHIP RESISTOR 33 k, 1W CHIP RESISTOR 0.471" X 0.080" MICROSTRIP 1.082" X 0.080" MICROSTRIP 0.372" X 0.080" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.050" X 0.080" MICROSTRIP 0.551" X 0.080" MICROSTRIP 0.825" X 0.080" MICROSTRIP 0.489" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 R1 15
, 1W CHIP RESISTOR
BOARD
THK 0.030"
r = 2.55
2oz ED Cu 2 SIDES
7/10
PD55015 - PD55015S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
8/10
4 inches
PD55015 - PD55015S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
9/10
PD55015 - PD55015S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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